乙烯对CVD法制备硅薄膜性能的影响

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

以硅烷和乙烯的混合气体为原料气，通过常压化学气相沉积方法在玻璃衬底上生长出了硅薄膜。结合光电子能谱、高分辨电镜以及薄膜抗腐蚀性研究，证实乙烯的引入使硅薄膜中形成一定数量的ＳｉＣ 微晶粒。ＳｉＣ 较高的化学稳定性使薄膜具有较强的耐碱性，而其较小的折射率使薄膜的镜面反射率较低。含有ＳｉＣ 的硅薄膜经碱液适当腐蚀后能降低镜面反射，进而有可能减少光污染现象。

Amorphous silicon film is grown by chemical vapor deposition (CVD) method on glass under the precursor gas of SiH 4 and C 2H 4 mixture.Combined with XPS,HREM and alkali resistance investigations,the SiC crystalline grain is verified to form in the silicon film.The strong alkali resistance and the low reflectivity of film are determined respectively by the high chemical stability and lower index of refraction of SiC compared with silicon.The alkali etched SiC containing silicon film can lower the mirror reflection from surface of film and thus decreases the light-pollution.