摘要
提出了一种用ＰＳＰＩＣＥ程序模拟绝缘栅双极型晶体管（ＩＧＢＴ）特性的方法。首先详细介绍了ＩＧＢＴ的ＰＳＰＩＣＥ模型的建立，以及利用外特性参数提取模型参数的方法。最后对所建立的模型进行了验证，证明了该方法的可行性。
A method to simulate the characteristics of insulated gate bipolar transistor(IGBT) with PSPICE program is proposed in this paper. The precise and effective circuit model as well as the modeling and the withdrawal of simulation parameters are described in details. The model is verified to be feasible through simulation of an actual IGBT's characteristics curves.
出处
《西安理工大学学报》
CAS
1999年第3期86-89,共4页
Journal of Xi'an University of Technology
