氮离子注入SiO_2单晶磨损机理的SEM研究

Investigation of the Wear Mechanism of N + Ion Implanted Single-crystal SiO_2 by SEM

利用氮离子注入技术改善ＳｉＯ２ 单晶表面的摩擦磨损性能，并用扫描电子显微镜研究了离子注入前、后的ＳｉＯ２ 单晶在干摩擦条件下与Ｓｉ３Ｎ４ 球对摩时的磨损机理．研究结果表明，经过１×１０１７ Ｎ＋ ／ｃｍ ２ 剂量的氮离子注入后，ＳｉＯ２ 单晶表面的耐磨性能比注入前提高了近４ 个数量级．氮离子注入使ＳｉＯ２ 单晶表层形成ＳｉＯ２ 微晶态与非晶态共存的混合态结构，其具有良好的抗塑变和塑性剪切能力，从而使ＳｉＯ２ 单晶的抗磨性能得到大幅度提高．

The tribological properties of N + implanted single crystal SiO 2 sliding against Si 3N 4 ball in dry air were investigated, the micro structure of the surfaces after friction was analyzed with SEM. The results show that N + implantation of single crystal SiO 2 at a dose of 1×10 17 N +/cm 2 increases the wear resistance by four order of magnitude. The mixed structure of micro crystal and amorphous SiO 2 is formed on the surface of single crystal SiO 2 after N + implantation. This contributes to increase the ability to resist plastic shear and raise the anti wear ability of single crystal SiO 2 greatly.