Gate leakage current of a double gate n-MOS on （111） silicon-a quantum mechanical study
Gate leakage current of a double gate n-MOS on （111） silicon-a quantum mechanical study
出处
《材料科学与工程（中英文版）》
2008年第10期1-5,共5页
Journal of Materials Science and Engineering
参考文献10
-
1G. Baccarani, S. Reggiani. A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects. IEEE Transactions on Electron Devices, 1999, 46(8): 1956-1666.
-
2A. Rahman, M. S. Lundstrom. A compact scattering model for the nanoscale double-gate MOSFET. IEEE Transactions on Electron Devices, 2002, 49(3): 48 !-489.
-
3T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase. Ultimately thin double-gate SOl MOSFETs. IEEE Transactions on Electron Devices, 2003, 50(3): 830.
-
4WANG J., M. Lundstrom. Tech. Dig. Int, Electron Devices Meet. 2002: 707.
-
5F. Stern. Self-consistent results for n-type Si inversion layers. Phys. Rev. B, 1972, 5: 4891-4899.
-
6YANG Nian, W. Kirklen Henson, John R. Hauser and Jimmie J. Wortman. Modeling study of ultrathin gate oxides using direct tunneling current and capacitance -voltage measurements in MOS devices. IEEE Transactions on Electron Devices, 1999, 46(7).
-
7A. N. Khondker, M. Rezwan Khan and A. F. M. Anwar. Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept. J. Appl. Phys., 1988, 63(10): 15,.
-
8Y. Tsividis. Operation and Modeling of MOS Transistor. MacGraw-Hill, Chapter-2, 1999.
-
9S. Ahmed, M. K. Alam, A. Alam, M. G. Rabbani and Q. D M. Khosru. Quantum mechanical study of gate leakage current in double gate MOS structures. International Semiconductor Device Research Symposium (ISDRS 2007), College Park, MD, USA, WP3-01, Dec. 12-14, 2007.
-
10CHANG L., YANG K. J., Yeo Y. C., Choi Y. K., King T. J. and HU C.. Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs. IEDM Teeh. Dig., 2001 : 99-102.
-
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-
2摩尔开口改定律[J].微电脑世界,2003(15):4-4.
-
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-
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-
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-
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-
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-
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-
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-
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