掺氮纳米金刚石膜的制备和性能

Preparation and Property of Nanocrystalline Diamond Film Doped with N

以Ar、CH_4和CO_2为反应气源,以三聚氰胺的甲醇饱和溶液为掺杂源,用微波等离子体化学气相沉积法在单晶硅基体上制备了掺氮的金刚石薄膜;用原子力显微镜、拉曼光谱以及霍尔效应测试仪等手段表征了膜的组成结构和半导体特性。结果表明:掺氮的金刚石薄膜晶粒平均尺寸约为20nm,表面粗糙度约为8.935nm,其拉曼光谱为典型的纳米金刚石膜特征峰形;掺氮膜材的电导率高达0.76×10~2Ω^(-1)cm^(-1),载流子浓度达到2.18×10^(19)/cm^3,是一种导电性能优良的n型半导体纳米金刚石膜。

Nanocrystalline diamond film doped with N was prepared on Si substrate by microwave plasma chemical vapor deposition（MPCVD） technology using Ar,CH4,CO2 as actiong gas source and the methanol saturated solution of melamine as doping source.The as-grown film was characterized with AFM microscopy and Raman spectrum,the phase composition of diamond film was characterized by its typical Raman spectrum form.Hall effect measurement was used to reveal its conductive feature.The results show that the thin film has average crytalline grains nearly 20nm and fine surface roughness about 8.935nm,the nitrogen doped nanocrystalline diamond film is highly conductive n-type semiconductor with eletric conductivity to 0.76×10^2Ω^-1cm^-1 and carrier concentration to 2.18×10^19/cm^3.