ZnO:Cd薄膜电学性能的研究

Study on Electric Property of Cd-doped ZnO Thin Films

ZnO是一种宽禁带半导体材料,它是高阻材料。为了增强ZnO薄膜的导电性能,采用Sol-gel法,结合旋转涂覆技术在Si(100)衬底上制备了ZnO∶Cd薄膜,掺镉浓度分别为2%～10%。各种浓度的样品以金(Au)作电极做成叉指电极,并用绝缘电阻测试仪对掺镉后ZnO∶Cd进行表面电阻率的测试。根据测试结果对所制备的ZnO∶Cd薄膜的电学性能进行了分析。分析表明采用掺杂方法,制备ZnO∶Cd薄膜并进行热处理,大大降低了电阻率,从而增强了ZnO∶Cd薄膜的导电性能,优化了工艺参数。

ZnO is a broad bandgap semiconductor material, it has high resistance. In order to improve the electric property of ZnO films, the sol-gel method is adopted, combining with spinning technique, a kind of ZnO：Cd film on Si （100） substrates is prepared. The Cd-doped concentration are 2%-10%. The samples with various concentrations are made into interdigital electrode with using Au as electrode, and the surface electrical resistivity of ZnO：Cd fihns has been tested with insulation resistance tester. The electric property of ZnO：Cd films has been analyzed according to the testing results. The electrical resistivity of ZnO：Cd films reduces greatly which is prepared by controlled doping method and heat treatment, therefore the electric conductivity of ZnO：Cd films is improved and the process parameters are optimized.