薄p型层GaN基p-i-n型紫外探测器的反向漏电特性

Study on Leakage Current of Thin p-layer GaN p-i-n Ultraviolet Detector

制备了薄p型层GaN基p-i-n型紫外探测器,并对其反向漏电特性进行了研究。探测器材料采用金属有机化学气相沉积(MOCVD)方法在蓝宝石衬底上外延生长获得,p-GaN的厚度为30nm。基于该材料制作了具有共面电极的探测器器件,并采用SiO2对刻蚀侧壁进行了钝化。测试结果表明,结面积为1.825×10-4cm2的器件在-1V时的反向漏电流面密度为3.0×10-9 A/cm2,优质因子达到3.7×109Ω.cm2。

GaN-based p-i-n ultraviolet photodiode with a thin p-GaN layer has been fabricated,and its leakage current is investigated.The photodiode is epitaxially grown on sapphire substrate by metal organic vapor phase deposition（MOVPE）,and its p-GaN thickness is 30 nm.The mesa surface treated by inductively coupled plasma（ICP） etching is passivated with SiO2 film.The detector with a junction area of 1.825×10-4 cm2 has a leakage current density of 3.0×10-9 A/cm2 at-1 V and a zero-biased resistance area product of 3.7×109 Ω·cm2.