CuPc有机薄膜晶体管稳定性研究

Study on Stability of Organic Field-effect Transistors Based on CuPc

以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了沟道宽长比为6 000/10的有机薄膜晶体管。通过比较在不同时期器件在空气环境中的电学特性,分析了环境对器件电学性能的影响。结果表明,在其他条件不变的情况下,当器件置于空气中时,其载流子的浓度和体电导率逐渐增大,迁移率几乎不受影响;相同栅极电压下器件达到饱和状态所需的源漏电压增大,线性区向饱和区推进;阈值电压减小,在栅极电压为0时,界面处逐渐形成导电沟道,器件从增强型向耗尽型转变。

The Organic Thin Films Transistors（OTFTs） with the ratio of channel width to length as 6 000/10 were fabricated.The copper phthalocyanine and silicon dioxide were used as the active layer and the insulating layer,respectively,and titanium/aurum were made as the electrode for the prepared OTFTs.The effect of the circumstance on the device was analyzed by comparing its electrical properties when it was in the air for different periods.The results show that when the device is in the air,its carrier concentration and bulk conductivity increase while the field-effect mobility has no change.The source-drain voltage increases for the same saturation state.The threshold voltage decreases and the linear region advances to the saturated zone.When the gate voltage is zero,the interface gradually forms the conductive channel,and the type of the device changes from the enhancement mode to depletion mode.