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聚乙烯醇作为绝缘层的有机场效应晶体管

Organic Field Effect Transistors with PVA Insulating Layer
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摘要 报道了一种有机场效应晶体管,它采用聚乙烯醇作为绝缘层,ITO作为栅极,酞菁铜作为有机半导体层,铝作为源漏电极。采用旋涂和真空掩蔽蒸发法,成功研制出了绝缘层为聚乙烯醇的有机场效应晶体管。经测试器件的载流子迁移率为4.56×10-3 cm2.V-1.s-1,开关比为300。器件显示出良好的输出特性,表明聚乙烯醇是一种合适的有机场效应晶体管绝缘层材料。 Reported is a kind of organic field effect transistor(OFET),which applies aluminum(Al) as the source/drain electrode,polyvinyl alcohol(PVA) as the insulating layer,ITO as the gate electrode and CuPc as the active layer.With the methods of spin coating and vacuum evaporation,the OFET with PVA insulating layer is sucessfully fabricated.Experimental results show that a high carrier mobility of 4.56×10-3 cm2·V-1·s-1 and high on/off ratio of 300 are achieved.This shows PVA is a suitable insulation material for OFETs.
出处 《半导体光电》 CAS CSCD 北大核心 2011年第2期172-174,178,共4页 Semiconductor Optoelectronics
基金 国家自然科学基金资助项目(60806047)
关键词 有机场效应管 聚乙烯醇 载流子迁移率 OFET PVA carrier mobility
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参考文献6

  • 1Lan Linfeng, Peng Junbiao, Sun Mingliang, et al. Low-voltage, high-performance n-channel organic thin- film transistors based on tantalum pentoxide insulator modified by polar polymer[J]. Organice Electron., 2009, 10: 346-351.
  • 2Seung H K, Heng P. Lithographyfree high resolution inkjet printed OFET (organic field effect transistor) fabrication on polymer by laser processing[J]. Proc. of SPIE, 2007, 6458: 645812.
  • 3Xiao Kai, Liu Yunqi, Huang Xuebin, et al. Field effect transistors based on Langmuir - Blodgett films of phthalo cyanine derivatives as semiconductor layers [J]. J. Phys. Chem. B, 2003, 107: 9226-9230.
  • 4Panzer M J, Newman C R. Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric [J]. Appl. Phys. Lett., 2005, 86: 103503.
  • 5Horowitz G, Hajlaoui R, Fichou D, et al. Analytical model for the organic field-effect transistor in the depletion mode. Application to sexithiophene films and single crystals[J]. J. Appl. Phys. , 1998, 85;3202.
  • 6董茂军,陶春兰,张旭辉,欧谷平,张福甲.聚酰亚胺为栅绝缘层的并五苯场效应晶体管[J].光电子.激光,2008,19(2):161-163. 被引量:3

二级参考文献14

  • 1李元勋,张怀武,韩莉坤.二阶非线性光学聚酰亚胺的合成及性能[J].光电子.激光,2005,16(9):1071-1073. 被引量:6
  • 2蒋艳,邱凤仙,张蓉仙,周钰明,刘举正,张旭苹.有机聚合物BPDA-ODA-DR1的合成及热光性能的研究[J].光电子.激光,2006,17(12):1492-1496. 被引量:4
  • 3Koezuka H,Tsumura A,Ando T.Field-effect transistorwith polythiophen thin films[J].Synth Met,1987,18:699-702.
  • 4Narayan K S,Kumar N.Light responsive polymer field-effect transistor[J].Appl Phys Lett,2001,79(12):1891-1893.
  • 5Lin Y Y,Dodabalapur A,Sarpeshkar R,et al.Organiccomp lementary ring-oscillators[J].Appl Phys Lett,1999,74(18):2714-2716.
  • 6Youji Inoue,Shizuo Tokito,Kaname Ito,et al.Organic thin-film transistors based on anthracene oligomers[J].J Appl Phys,2004,95(10):5795-5799.
  • 7Dimitrakopoulos C D,Brown A R,Pomp A.Molecular beam deposited thin films of pentacene for organic field-effect transistor aplications [J].J Appl Phys,1996,80(4):2501-2508.
  • 8Gamier F,Horowitz G,Pen X Z,et al.An all-organic ‘soft’thin film transistor with very high carrier mobility[J].Adv Mater,1990,2:592.
  • 9yang Y S,Kim S H,Lee J,et al.Deep-level defect characteristics in pentacene organic thin films[J].Appl Phys Lett,2002,80(9):1595-1597.
  • 10Nelson S F,Lin Y Y,Gundlach D J,et al.Temperature-independent transport in high-mobility pentacene transistors[J].Appl Phys Lett,1998,72(6):1854-1856.

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