摘要
We fabricate an ultraviolet photodetector based on a blend of poly （N-vinylcarbazole） （PVK） and 2- tert-butylphenyl-5-biphenyl-1, 3, 4-oxadiazole （PBD） using spin coating. The device exhibites a low dark current density of 2.2×10 3 μA/cm 2 at zero bias. The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of –1 V. We also study the performances of photodetectors with different blend layer thicknesses. The largest photocurrent density is obtained with a blend of 90 nm at the same voltage.
We fabricate an ultraviolet photodetector based on a blend of poly （N-vinylcarbazole） （PVK） and 2- tert-butylphenyl-5-biphenyl-1, 3, 4-oxadiazole （PBD） using spin coating. The device exhibites a low dark current density of 2.2×10 3 μA/cm 2 at zero bias. The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of –1 V. We also study the performances of photodetectors with different blend layer thicknesses. The largest photocurrent density is obtained with a blend of 90 nm at the same voltage.
基金
supported by the National Natural Science Foundation of China (No. 50972007)
the Beijing Municipal Natural Science Foundation (No. 4092035)
the Foundation of Beijing Jiaotong University (No.2006XZ008)
the Special Items Fund of Beijing Municipal Commission of Education
the National ScienceFund for Distinguished Young Scholars (No. 60825407)
