RbTiOAsO_4晶体中的生长缺陷和生长机制

Growth Defects and Growth Mechanisms of RbTiOAsO 4 Crystals

采用熔盐法生长了大尺寸 Ｒｂ Ｔｉ Ｏ Ａｓ Ｏ４ 晶体。利用同步辐射形貌术和化学腐蚀法，研究了 Ｒｂ Ｔｉ Ｏ Ａｓ Ｏ４ 晶体中的生长缺陷。发现该晶体中的生长缺陷主要为生长位错和生长扇界，大部分位错沿［１００］ 方向， Ｂｕｒｇｅｒｓ 矢量为［００１］ 。在扫描电镜下，对原生 Ｒｂ Ｔｉ Ｏ Ａｓ Ｏ４ 晶体的表面形态进行了观察，根据其表面二次电子像的特征，对不同晶面的生长控制机制进行了讨论。

RbTiOAsO 4 crystals with large dimensions were grown by means of flux method.Using synchrotron radiation X ray topography and chemical etching method,the growth defects in RbTiOAsO 4 crystals were investigated.It was found that grown in dislocations and growth sector boundaries are the predominant defects in the crystals.the majority of dislocations are along the [100] lines,and Burgers vector is [001] direction.The morphology of surfaces of as grown RbTiOAsO 4 crystals were observed by scanning electron microscope.Based on the features of secondary electron images of different surfaces,the growth mechanisms of RbTiOAsO 4 crystals were discussed.