摘要
首次利用喷雾热分解法成功地制备出低压ＺｎＯ压敏薄膜．沉积温度３５０℃，沉积时间２ｈ；退火温度６５０℃，退火时间１ｈ．Ｘ射线分析表明薄膜经退火后已良好晶化．其非线性系数α为８．０９；压敏电压Ｖ１ｍＡ为１３．１５Ｖ．
ZnO low voltage thin film varistor prepared by means of spray pyrolysis for the first time is reported in this paper. The thin film was deposited at 350 for 2 h and annealed at 650 . X-ray shows at the annealed thin films main phase is ZnO phase. The thin films nonlinear coefficient reaches 8.09 and its breakdown voltage(V1mA) is 13.15 V. Experimental result indicates that low breakdown voltage(V1mA)can be obtained by preparing ZnO thin film.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1999年第4期505-507,共3页
Journal of The Chinese Ceramic Society
基金
西部之光项目资助
