摘要
The establishment of an approach to design tunable yellow emission through singly doped single-phased phosphors to obtain white LED-based InGaN chip was reported. BaY2–xS4：xHo3＋ phosphors were prepared by the high temperature solid state reaction and characterized by X-ray diffraction and photoluminescence spectra. Under the excitation of 465 nm,the emission spectra of these phosphors exhibited three sharp emission lines peaked at about 492,543 and 661 nm of Ho3＋ corresponding to 5F3,5F4 （5S2） and 5F5→5I8 transitions,respectively,with comparable intensities,resulting in a yellow light emission. The luminescence mechanism for Ho3＋ in BaY2S4 was explained.
The establishment of an approach to design tunable yellow emission through singly doped single-phased phosphors to obtain white LED-based InGaN chip was reported. BaY2–xS4：xHo3＋ phosphors were prepared by the high temperature solid state reaction and characterized by X-ray diffraction and photoluminescence spectra. Under the excitation of 465 nm,the emission spectra of these phosphors exhibited three sharp emission lines peaked at about 492,543 and 661 nm of Ho3＋ corresponding to 5F3,5F4 （5S2） and 5F5→5I8 transitions,respectively,with comparable intensities,resulting in a yellow light emission. The luminescence mechanism for Ho3＋ in BaY2S4 was explained.
基金
Project supported by the National Natural Science Foundation of China (20971042 and 50772035)
the Science and Technology Office of Educa-tion Department of Hunan Province (10A070)
the Science and Technology Bureau of Changsha City Government (K0902014-11)
