In:Ho:LiNbO_3晶体的生长及抗光损伤性能

Growth and Optical Damage Resistance Properties of In:Ho:LiNbO_3 Crystals

在同成分铌酸锂(LiNbO3)晶体中掺入1%(摩尔分数,下同)Ho2O3和分别为0,1%,3%,5%的In2O3,采用提拉法生长In:Ho:LiNbO3晶体。测试晶体的紫外–可见吸收光谱、双折射梯度和抗光损伤能力。结果表明:随着In:Ho:LiNbO3晶体中In3+含量的增加,吸收谱中吸收边连续紫移;5%In:1%Ho:LiNbO3晶体有较好的光学均匀性,5%In:1%Ho:LiNbO3晶体的抗光损伤能力比1%Ho:LiNbO3提高2个数量级以上。用电感耦合等离子体发射光谱法测定了晶体中In3+和Ho3+的摩尔含量,并计算其分凝系数,随晶体中In3+含量增加,Ho3+的分凝系数由0.36提高到0.71。结合LiNbO3晶体的锂空位缺陷模型和占位机制解释了相关实验结果。

A series of In：Ho：LiNbO3 crystals were grown by the Czochralski method in congruent LiNbO3 melt doped with 0,1%（in mole,the same below）,3% and 5% In2O3 and 1%Ho2O3,respectively.The ultraviolet–visible absorption spectra,birefringence gradient and optical damage resistance threshold of the In：Ho：LiNbO3 crystals were measured.The results show that the absorption edge con-tinuously violet shifts with the increase of the In3＋ content in the crystals.The 5%In：1%Ho：LiNbO3 crystal possessed a superior opti-cal homogeneity.The optical damage resistance of the 5%In：1%Ho：LiNbO3 was two orders of magnitude higher than that of 1%Ho：LiNbO3.The mole contents of In3＋ and Ho3＋ in the crystal were determined by an inductance coupled plasma atomic emission spectrum technique,and the segregation coefficients of In3＋ and Ho3＋ in the crystals were calculated.The segregation coefficients of Ho3＋ increased from 0.36 to 0.71 with increasing the In3＋ content in the crystal.The experimental results were analyzed based on the Li-vacancy defect model.