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AgGa_(1-x)In_xSe_2晶体热处理研究 被引量：2

Heat Treatment Study on AgGa_(1-x)InxSe_2 Crystals
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摘要 结合差示扫描量热曲线（DSC）和相图确定出热处理的温度范围。分别在真空和AgGa1-xInxSe2（x=0.2,0.6,0.8）多晶粉末包埋下,对AgGa0.4In0.6Se2晶体进行了热处理实验,分析了热处理对晶体性能的影响。结果表明：用x=0.6和0.8的多晶粉末包埋,在680℃下保温120 h后再淬火处理的晶片,其红外透过率在550~5500 cm-1波数范围内整体提高到65%以上,光学质量显著提高;EDX和XRD分析表明,采用AgGa0.2In0.8Se2多晶粉末包埋,能够补充晶片中的In缺失,成分更接近AgGa0.4In0.6Se2化学计量比,同时晶片结晶质量也得到明显改善。 The heat treatment temperature range was determined on the basis of differential scanning calorimetry results and phase diagrams.Heat treatment of the as-grown AgGa0.4In0.6Se2 crystals were carried out in vacuum and embeded in AgGa1-xInxSe2（x= 0.2,0.6,0.8） powders,respectively.The effects of heat treatments on the properties of the crystal were analyzed.The results show that the IR transmittance of wafers was enhanced above 65% in the region of 550-5500 cm-1 when the AgGa1-xInxSe2（x= 0.6,0.8） powder soaked at 680 ℃ for 120 h and then quenched.The optical quality of the crystal was significantly improved.The EDX and XRD results show that,after the heat treatment in AgGa0.2In0.8Se2 powder,the relative concentration of In in the as-grown wafer could be complemented,and the crystal composition is close to the theoretical stoichiometry.Furthermore,the crystalline quality was remarkably improved.
作者 许建华 赵北君 朱世富 陈宝军 何知宇 万书权
机构地区 四川大学材料科学系
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第2期304-308,共5页 Journal of Synthetic Crystals
基金 教育部博士点基金(20040610024)资助项目
关键词 AgGa1-xInxSe2 热处理 红外透过率 热分析 光学质量 结晶质量 AgGa1-xInxSe2 heat treatment IR transmittance thermal analysis optical quality crystalline quality
分类号 O782.8 [理学—晶体学]
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共引文献2

同被引文献37

  • 1吴海信,石奇,张维,毛明生,程干超,杨琳.新型AgGa_(1-x)In_xSe_2晶体用于CO_2激光倍频研究[J].人工晶体学报,2006,35(1):85-90. 被引量：4
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人工晶体学报
2011年 第2期

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