衬底温度对In_2S_3薄膜结构及其性能的影响

Effect of Substrate Temperature on Structure and Properties of In_2S_3 Films

采用超声喷雾热解法,在玻璃基底上一步合成了In2S3薄膜。研究了衬底温度对In2S3薄膜的结构、表面形貌、电学和光学性能影响。结果表明:所制备的In2S3薄膜均具有沿(220)面择优取向生长特性且无其他杂相,衬底温度对薄膜的均匀性、致密度、结晶程度均有明显影响,并因此影响薄膜的光电性能。薄膜的导电性随着衬底温度的升高迅速增强,但是在衬底温度为350℃时有所降低。衬底温度为300℃所制备的薄膜在可见光区透光率最高达到90%以上,禁带宽度达到2.43 eV。

In2S3 thin films were prepared on glass substrates by ultrasonic spray pyrolysis method.The effect of substrate temperatures on the structure,surface morphology and photoelectric properties of films were investigated.The results indicated that the as-prepared In2S3 thin films have a preferential orientation along the（220） direction and no other phases were observed.The growth temperatures have great effect on the uniformity,relative density,crystallinity of films,which influence photoelectric properties of the films.As the growth temperature increasing,the conductivity of In2S3 films increased sharply,but decreased when Ts=350 ℃.Optical transmittance of films prepared when the substrate temperature is 300 ℃ is over 90% in the visible region and its energy band gap come up to 2.43 eV.