射频反应磁控溅射制备ZnO薄膜的微结构及其光学性能

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

采用射频反应磁控溅射技术在石英和Si衬底上制备了高度c轴择优取向的ZnO薄膜,样品的氧氩流量比分别为10:40,20:40,30:40,40:40。利用X射线衍射仪、表面轮廓仪、原子力显微镜和紫外-可见分光光度计研究了样品的微结构与光学特性。研究表明:氧氩流量比为30:40的样品结晶质量最好。所制备的ZnO薄膜的可见光平均透射率均大于87%。随着氧氩流量比的增大,薄膜的透射率呈非单调变化,氧氩流量比为30:40的样品在可见光范围的平均透射率可达93%。光学带隙随着氧氩流量比的增大,先增大后减小。与块材ZnO的带隙(3.37 eV)相比,ZnO薄膜的带隙均变窄。

The c-axis preferred orientation ZnO films was deposited on quartz and Si substrates using RF reactive magnetron sputtering.The O2∶Ar flow ratio was 10∶40,20∶40,30∶40 and 40∶40 during the magnetron sputtering process.The microstructure and optical properties of ZnO films were investigated by X-ray diffraction,stylus profilometer,atomic force microscope and ultraviolet-visible spectrum.The results indicated that ZnO films prepared at 30∶40 had the best crystal quality.The average transmission of ZnO thin films are above 87%.As the O2∶Ar ratio increasing,the transmission of ZnO thin films change non-monotonically and reach a maximum of above 93% at 30∶40.The optical band gap of ZnO films first increases and then decreases as O2∶Ar ratio increasing.Compared with the optical band gap（3.37 eV） of buck ZnO,the band gap of all ZnO films become narrow.