大尺寸ZnGeP_2晶体生长与中红外光参量振荡

Growth and Mid-infrared Optical Parametric Oscillator of Large ZnGeP_2 Single Crystals

采用垂直布里奇曼方法生长了ZnGeP2单晶体,晶体毛坯尺寸达30 mm×120 mm。晶体在2.05μm吸收系数0.05cm-1,3-8μm吸收系数0.01 cm^-1,光损伤阈值2.0±0.3 J/cm2。利用2.05μmTm,Ho∶CdVO4激光器为泵浦源,脉冲重复频率10 kHz。当泵浦功率16.3 W时,3-5μm光参量振荡输出8.7 W,光-光转换效率为53%,斜率效率为64%。

ZnGeP2 single crystals were grown by vertical Bridgman method.The ingot size was 30 mm×120 mm.The optical absorption coefficient of crystal is 0.05 cm^-1 at 2.05 μm,and 0.01 cm-1 at 3-8 μm.Laser induced damage threshold is 2.0±0.3 J/cm2.Using a pulsed 2.05 μm Tm,Ho∶CdVO4 laser at pulse repetition rate of 10 kHz.The output is up to 8.7 W in the 3-5 μm wavelength range under total incident pump power of 16.3 W,which corresponded to conversion efficiency of 53% and slope efficiency of 64%.