SiO_2-CeO_2复合氧化物对硅片的抛光性能评价

Evaluation of Polishing Property for Silicon Wafer of SiO_2-CeO_2 Mixed Oxides

用合成的S iO2-CeO2复合氧化物对单晶硅片进行抛光,测定其抛光速率与制备条件及浆料配制条件之间的关系。结果表明:经800℃煅烧后制得的硅铈摩尔比nS iO2∶nCeO2为2∶1的复合氧化物对硅片具有最大的抛蚀速率。与此同时,选用三乙醇胺和六偏磷酸钠分别作为浆料的pH调节剂和分散剂可以获得理想的浆料分散性和悬浮稳定性。确定了抛光浆料的最佳pH值和固含量分别为11和4%。

SiO2-CeO2 mixed oxides were used as abrasives for the polishing of silicon wafer.The material removal rate（MRR） was examined as a function of preparation and polishing conditions.It was found that the mixed oxides,with molar ratio of nSiO2∶ nCeO2 =2∶ 1 calcined at 800 ℃,showed the greatest polishing rate for silicon wafer.At the same time,triethanolamine and sodium hexametaphosphate were employed respectively as slurry pH regulator and as dispersing agent to obtain polishing slurry with desirable dispersion and suspension stability.The optimal pH value and solid concentration in polishing slurry were determined to be 11 and 4%.