硅太阳电池参数求解算法的研究

Research on solving algorithm of silicon solar cell parameters

为了得到单体硅太阳电池的电流方程,必须确定单体硅太阳电池的二极管品质因子n,反向饱和电流Io和电池串联内阻Rs的值。通过理论分析和实验仿真,发现同一块太阳电池在相同的温度和照度、不同的二极管品质因子和反向饱和电流下,输出的光生电流Iph是相等的。基于这一结论,提出了一种假设运算的方法。该方法依据硅太阳电池的四个特性参数短路电流Isc、开路电压Voc、最大功率点电流Imp、最大功率点电压Vmp,应用硅太阳电池的电流公式表示出n,Rs,Io三者之间的关系,结合MATLAB编程求解出三者的数值,结果显示理论误差和测试误差相比小于2%。

In order to determine the silicon solar cell＇s current equation,it is necessary to determine the value of series resistance Rs,reverse saturation current density Io and diode ideal factor n.Through theoretical analyses and simulations,it is found that when the temperature and irradiation are the same,the output photocurrent Iph of the same piece of solar cell remains constant although the diode quality factors and reverse saturation currents are different.Based on the conclusion,a new method was proposed,which was based on the four characteristic parameters of solar cell： the short circuit Isc,open circuit voltage Voc,current Imp and voltage Vmp of maximum power.The relationship between n,Rs and Io was shown by current formula of solar cell,and then the value of n,Rs and Io could be got by MATLAB programming.The results demonstrate that the error between theoretic values and experimental values is smaller than 2 percent.