摘要
基于溅射沉积和薄膜生长原理,系统综述分析溅射功率、沉积气压、衬底温度、衬底的选择等对硅薄膜晶化过程的客观影响规律,旨在为学术界和产业界基于溅射原理研发晶态硅薄膜、生产高效率硅基组件提供实验支持与理论参考。
Based on sputtering depositing principium and film growth principium, the impersonal effect of sputtering power, deposition pressure, substrate temperature and substrate selection on the crystallization process of silicon films was systematic analyzed. It is expected to provide experimental support and theoretical reference for academic and industry to R ＆ D crystalline silicon film and produce high efficiency of silicon-based components based on sputtering principium.
出处
《表面技术》
EI
CAS
CSCD
北大核心
2011年第3期62-64,共3页
Surface Technology
关键词
溅射环境
硅薄膜
晶化
sputtering environment
silicon films
crystallization
