摘要
本研究采用等摩尔分数的Sb元素替换Ga2Te3中的Ga元素,并利用放电等离子烧结技术制备Ga1.9Sb0.1Te3合金,研究其微观结构和热电性能。结果表明,添加Sb元素后,材料的Seebeck系数为130～240μV/K,明显低于单晶Ga2Te3,电导率为3600～1740??1·m?1,至少是单晶Ga2Te3的17倍,热导率提高近25%。在649K时Ga1.9Sb0.1Te3合金的热电优值(ZT)达到最大值0.1,是同温度下单晶Ga2Te3ZT值的3倍。
Sb element was substituted for Ga in the Ga2Te3 alloy with the same molar fraction and Ga1.9Sb 0.1Te3 alloy was prepared by spark plasma sintering.The microstructure and the thermoelectric（TE） property of the alloy were investigated.Results show that after Se doping the Seebeck coefficient of the sample is about 130-240 μV/K,much lower than that of single crystal Ga2Te3,and the electrical conductivity decreases from 3600 to 1740 ？？1·m？1 with temperature elevation to 649 K,being at least 16 times higher than that of single crystal Ga2Te3 at the corresponding temperature.The thermal conductivity increases by about 25% after Sb doping.The maximum TE figure of merit（ZT） value of 0.1 is obtained at 649 K,which is approximately 3 times as large as that of single crystal Ga2Te3 at the corresponding temperature.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2011年第5期849-852,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金(50871056)
