摘要
阐述了新型功率半导体器件———集成门极换向型晶闸管ＩＧＣＴ（Ｉｎｔｅｇｒａｔｅｄ Ｇａｔｅ Ｃｏｍ ｍｕｔａｔｅｄ Ｔｈｙｒｉｓｔｏｒ） 的基本工作原理和关键设计技术。ＩＧＣＴ在ＧＴＯ 技术的基础上，采用硬驱动技术，集成其门极驱动电路和反并联二极管，省去了吸收电路，兼具ＧＴＯ 导通损耗低和ＩＧＢＴ 关断均匀的特点。由于其开关频率高，易于串联，故适合在中电压大功率领域使用。
The paper introduces the operation principle and key technology of the Integrated Gate Commutated Thyristor(IGCT).Great improvement was achived based on GTO technology by integrating with gate drive circuit and anti parallel diode and by omitting the snubber.The IGCT combines the advantages of low on state loss of GTO and uniform turn off behavior of IGBT.Because of its high switching frequency and easy series connection,it is suitable for medium voltage high power applications.
出处
《电力电子技术》
CSCD
北大核心
1999年第5期55-57,共3页
Power Electronics
基金
国家自然科学基金
