掺Sb二氧化锡半导体导电机理的实验探讨

Conduction Mechanism of Sb_2O_3 Doped SnO_2 Semiconductor

测量了650～1200℃范围内烧成的掺杂 Sb_2O_3的 SnO_2样品的电阻率。实验表明,随样品烧成温度的提高,样品的电阻率下降。X 射线物相分析指出,在650～1000℃烧成的样品,Sb_2O_3完全转变成了 Sb_2O_4,1100℃烧成的样品大部分为 Sb_2O_4,而1200℃烧成的样品几乎全为 Sb_2O_3。对于不同温度下烧成的样品作了精密晶胞参数测定,结果表明,在半密封条件下,650～1100℃使 Sn_O_2半导化的是 Sb_2O_4中的 Sb^(5+),在1200℃使 SnO_2半导化的是 Sb^(5+)和双电离的氧空位 V。(?)。

The resistivities of the Sb_2O_3 doped SnO_2 samples fired from 650 to 1200℃ weremeasured.The experimental results showed that their resistivities were decreased withthe increase in firing temperatures.It was indicated by XRD phase analysis thatSb_2O_3 fully converted into Sb_2O_4 for the samples fired from 650 to 1000℃ andmostly converted into Sb_2O_4 for the samples fired at 1100℃,but most part ofSb_2O_4 reconverted into Sb_2O_3 and in the samples fired at 1200℃.The lattice parameters of SnO_2 and Sb_2O_3 doped SnO_2 samples at different fi-ring temperatures were measured,The semiconduction of the Sb_2O_3 doped SnO_2 sa-mples fired from 650 to 1100℃ was caused by Sb^(5+) of Sb_2O_4 and for the samesamples fired at 1200℃ by Sb^(5+) and double ionized oxygen vacancies V(?)