摘要
本文报道了对新型锑酸镉 Cd_6Sb_2O_(10)半导瓷进行热分析、化学分析和高温 X 射线衍射分析的实验结果,并对它的合成过程和相变进行了系统的分析讨论。结果表明,在以 CdO 和 Sb_2O_5为原料合成 Cd_6Sb_2O_(10)的过程中,温度效应比较显著,反应从1000℃开始,到1200℃结束;Cd_6Sb_2O_(10)在240℃左右发生—结构相变,高温相具有较高的对称性,此相变是可逆的,而且与 Cd_6Sb_2O_(10)半导瓷在中温区的电导特性密切相关。
The thermal analysis (DTA and TG),chemical analysis and high temperatureX-ray diffraction analysis on Cd_(?)Sb_2O_(10) semiconductive ceramics were carried out.The synthesis and phase transformation of Cd_6Sb_2O_(10) were discussed.The resultsindicate that the synthetic reaction between CdO and Sb_2O_5 begins at 1000℃ andfinishes at 1200℃.A reversible structural phase transformation takes plase at about240℃ for Cd_6Sb_2O_(10) and the high temperature phase has a higher symmetry.Thephase transformation temperatures in heating and cooling processes are 246℃ and228℃ respectively.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第4期318-323,共6页
Journal of Inorganic Materials
基金
国家科学基金
关键词
锑酸镉
电子陶瓷
半导体陶瓷
相变
Cd_6Sb_2O_(10)
Electronic ceramics
Semiconductive ceramics
Synthesis
Phase transformation