磷离子注入纳米金刚石薄膜的n型导电性能与微结构研究

The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films

系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低.这说明纳米金刚石晶粒为薄膜提供了电导.1000℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径.

Phosphorus ions are implanted into nanocrystalline diamond（NCD） films followed by being annealed at different temperatures.The results show that the samples exhibit good n-type conductivity when annealing temperature is increased to 800 ℃ and above.Raman spectroscopy and electron paramagnetic resonance measurements display that the sample with a larger quantity of diamond phase with better lattice perfection has a lower resistivity.It is indicated that nano-sized diamond grains make contributions to the n-type conductivity in the films.After 1000 ℃ annealing,the amorphous carbon grain boundaries become more ordered,which leads the dangling carbon bonds to decrease and the resistivity of the film to increases.It is revealed that the amorphous carbon grain boundaries supply a conduction path to the n-type phosphorus ion implanted nanocrystalline diamond grains.