高温热退火时异质结薄膜CeO_2/Si界面扩散-反应的机理研究

INVESTIGATION OF THE DIFFUSION-REACTION NEAR INTERFACE OF HETEROSTRUCTURE CeO_2/Si DURING HIGH TEMPERATURE ANNEALING

基于CeO2／Si异质结在氧气氛下高温退火界面存在扩散反应过程，建立了扩散－反应方程，对有关的实测数据进行了计算机拟会，其结果与实验能很好地吻合．不同温度下的拟合结果还表明，异质结界面处O，Ce，Si的扩散系数及Si的氧化反应系数均随温度指数上升，并计算出扩散反应激活能．

Components, O, Ce and Si, near the CeO2/Si heterostURE interface are obvious ly changed and silicon oxidation appears after CeO2/Si was annealed at high temperature in the oxygen environment. These mean that diffusion-reaction occurs in this annealing process.Based on these, computer simulation is carried out and the results show that the diffusion coefficients of O, Ce and Si, and the reaction coefficient for silicon oxidation increase with the exponentinl function of temperature, and obey thermal activation energy rule. The activation energy of the diffusion and reaction are deduced