GaAs/AlGaAs多量子阱结构材料的光致发光特性

PHOTOLUMINESCENCE OF GaAs/AlGaAs MQW METERIAL GROWN BY MOCVD

采用ＭＯＣＶＤ技术制备了ＧａＡｓ／ＡｌＧａＡｓ多量子阱结构材料，对其进行了光致发光特性的测量，结果观察到５个发光峰，其波数分别为υ＝９６００ｃｍ－１，１２０２０ｃｍ－１，１２２４０ｃｍ－１，１２５５０ｃｍ－１和１３０７０ｃｍ－１。

Photoluminescence of GaAs/AlGaAs MQW meterials grown by MOCVD was measured.Five luminescence peaks which are at 9 600 cm -1 ,12 020 cm -1 ,12 240 cm -1 ,12 550 cm -1 ,13 070 cm -1 ,respectively,have been observed.The positions for above five luminescence peaks are interpreted.