In Ⅱ偶宇称J=0和J=1时的辐射寿命(英文)

Radiative lifetimes of even-parity J=0 and J=1 of In Ⅱ

利用多通道量子数亏损理论(MQDT)研究了一价铟离子5sns^1S_0(n=6～20),5sns^3S_1(n=5～15)and 5snd^1D_1(n=5～14)的能级结构及寿命,分析了各通道之间的干扰.这些能态数据对于新材料的研究具有一定的指导意义。

The energy levels and lifetimes of 5sns ^1S0（n = 6-20）, 5sns ^3S1 （n=5-15） and 5snd 1D1 （n= 5-14） of singly ionized indium are calculated and predicted by means of the multichannel quantum defect theory （MQDT）. In addition, the analyses of perturbation images between the channels are given.