MPS二极管的优化结构设计

Research on MPS Power Diode Design Optimization

无论是现代高压功率半导体器件IGBT(绝缘栅双极晶体管)还是早期晶闸管控制系统中都不会缺少功率整流管的身影。功率整流管器件的软恢复能力是现阶段广为关注的一个非常重要的参数指标。主要目标是对一种新型结构二极管(MPS)的设计优化工作进行研究。从理论上分析了MPS功率整流器件的工作机理,对它的优缺点进行了分析。根据软恢复特性与结构的关系,在原有结构基础上增加了缓冲层,根据不同浓度和厚度的缓冲层对MPS的分析,得出了在MPS二极管中增加缓冲层可以改善器件软恢复特性的结论。

Power rectifiers are presented in both modern high -voltage power semiconductor devices IGBT （ Insulated - Gate Bipolar Transistor） and previous thyristor control systems. Nowadays, soft recovery capability of power rectifier devices gains widely attention as a very important parameter. The main purpose is to study the optimization design of a new structure diode MPS. The working mechanism of MPS power rectifier is analyzed theoretically, and its advantages and disadvantages are analyzed. The buffer layer has been added based on the original structure according to the soft recovery characteristics and structure of relations, a analysis of MPS soft - recovery characteristic on different concentrations and thickness has been carried out. The conclusion that soft recovery characteristic of the devices can be improved by adding the buffer layer to MPS diodes has been obtained.