溅射功率对射频磁控反应溅射制备的Ag_2O薄膜微结构的影响

Sputtering Power and Microstructures of RF Reactively Sputtered Ag_2O Films

利用射频磁控溅射技术,通过调节溅射功率(P)在200℃、氧氩比为2∶3条件下在玻璃衬底上制备了一系列氧化银(Ag2O)薄膜。利用X射线衍射谱和扫描电子显微镜重点研究了P对Ag2O薄膜微结构的影响。研究结果表明Ag2O薄膜具有(111)择优取向,这可能归结于(111)面的表面自由能最低。随着P从120 W增大到240 W,Ag2O薄膜(111)方向的平均晶粒尺寸从22.92 nm增大到27.96 nm,薄膜的表面结构呈现了从均匀、致密的表面结构向疏松、多孔洞的表面结构的演变。Ag2O(111)衍射峰的2θ角与标准值偏差(2θshift)随P的增大先减小后增大,(111)衍射峰峰位向2θ增大的方向发生了明显的移动。根据量子尺寸效应,薄膜的应力与晶粒尺寸呈反比关系,因此薄膜的应力随P的增大先减小后增大。P=240 W时薄膜的应力最小。从应力的角度,这基本可以合理解释P=210 W时制备的Ag2O薄膜的结晶质量最好,尽管与实验结果有些差异。

The Ag2O films were grown by RF reactive magnetron sputtering on glass substrates.The impacts of the growth conditions,including the sputtering power,substrate temperature,argon/oxygen ratio,and pressure,on its microstructures and properties were studied with scanning electron microscopy and X-ray diffraction.The results show that the sputtering power significantly affects the microstructures and surface stress of the films with an（111） preferential growth orientation.As the sputtering power increases from 120 W to 240 W,its fairly compact,uniform surfaces roughness with an increase of the averaged grain size from 22.92 nm to 27.96 nm and a higher pore density.The optimized sputtering power was found to be 210 W.Possible mechanisms were tentatively discussed