摘要
介绍了GaN材料的优良特性以及工艺上存在的问题;着重介绍了GaN微电子器件的历史发展和最新发展;GaN微电子器件发展表现出较大应用潜力。
This paper introduced the properties of GaN materials and the problems existing in the process.The history and late development of the GaN microelectronic devices was focused on.And comparatively large utilization potentiality can be seen in the development trend.
出处
《河北省科学院学报》
CAS
2011年第1期49-55,共7页
Journal of The Hebei Academy of Sciences