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S波段低噪声放大器设计 被引量:3

Design of S-Band Low Noise Amplifier
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摘要 首先分析了低噪声放大电路的稳定性,功率增益及噪声系数的影响因素及改进方法;然后设计了一个中心频率为2.45 GHz,工作带宽为100 MHz的S波段低噪声放大器。仿真结果表明,该放大器的噪声系数小于1 dB,功率增益大于28 dB,增益平坦度小于1 dB,输入/输出驻波比小于2∶1。通过传统的电路板制作工艺实际制作了放大器电路,测试结果和仿真结果较一致。 The stability,power gain,noise figure of low noise amplifier,as well as the influent factors and improved methods are analyzed in this paper.An S-band low noise amplifier with 2.45 GHz central frequency,100 MHz operation bandwidth is designed.The simulation results show that the noise figure1 dB,the power gain28 dB,the flatness of gain1 dB and the input/output VSWR 2∶1.An experimental LNA circuit is realized through traditional PCB process,the measured results are in good agreements with the simulation ones.
出处 《压电与声光》 CSCD 北大核心 2011年第3期505-508,共4页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(51078369)
关键词 低噪声放大器 噪声系数 功率增益 low-noise amplifier noise figure power gain
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参考文献7

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同被引文献21

  • 1张士化,何子述.S波段低噪声放大器的分析与设计[J].现代电子技术,2005,28(18):75-76. 被引量:7
  • 2何海龙,张祖荫.CDMA低噪声放大器的研究与设计[J].科学技术与工程,2006,6(12):1690-1692. 被引量:1
  • 3廖友春,唐长文,闵昊.一种用于电视调谐器的宽带CMOS低噪声放大器设计[J].Journal of Semiconductors,2006,27(11):2029-2034. 被引量:3
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  • 6Allstot D J,Li X,Shekhar S.DesignConsiderations forCMOS Low-Noise Amplifiers[Z].[S.l.]:IEEERFICSymposium,2004:97-100.
  • 7Li X,Shekhar S,Allstot D J.Gm-Boosted Common-GateLNA and Differential Colpitts VCO/QVCO in 0.18-umCMOS[J].IEEE Journal of Solid-State Circuits,2005,40(12):2609-2619.
  • 8Dai Zhihong, Hu Yongzhong, Xu Kunzhi. Two-stage low noise ampli- fier for BD-II receiver application. Millimeter Waves (GSMM), 2012 : 303-306.
  • 9Gupta S K, Garg A, Singh N P. Design and simulation of an im- proved dual band LNA for WLAN applications. Computer and Com- munication Technology (ICCCT), 2010:678-682.
  • 10伍东兴.S波段低噪声放大器的设计与优化.西安:西安电子科技大学,2013.

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