摘要
对常压烧结的 Si C 陶瓷与 Ti Al 金属间化合 物进行了真空扩散连接。采用扫描电镜、电子探针和 X 射线衍射分析等手段确定了反应产物的种类和接头的界面结构,并用拉剪试验评价了接 头的连接强度。研究结果表明, Si C 与 Ti Al 扩散连接中生 成了 Ti Al2 、 Ti C 和 Ti5 Si3 Cx 三种新相,接头的界 面结构为 Si C/ Ti C/( Ti C+ Ti5 Si3 Cx)/( Ti Al2 + Ti Al)/ Ti Al 。在1573 K 和1 .8 ks 的连接条件下,接头室温剪切强度达到240 M Pa ,高温(973 K) 剪切强度达到230 M Pa 。
Diffusion bonding of Pressureless-sintered SiC ceramic to TiAl intermetallic compound was carried out. The kinds of the reaction products and the interface structures of the joints were investigated by SEM, EPMA and XRD. The bonding strength of the joints was evaluated by tension-shear test. The experimental results showed that the three kinds of new phases,TiAl 2, TiC and Ti 5Si 3Cx, occur during the diffusion bonding of SiC to TiAl and that the interface structures of the joints can be expressed by SiC/TiC/(TiC+Ti 5Si 3C X)/(TiAl 2+TiAl)/TiAl. The shear strength of the joint, which was bonded at 1573 K for 1.8 ks, is up to 240 MPa at room temperature and 230 MPa at the test temperature of 973 K.
出处
《焊接学报》
EI
CAS
CSCD
北大核心
1999年第3期170-174,共5页
Transactions of The China Welding Institution
基金
哈工大校管基金
国防科技预研基金
焊接国家重点实验室基金
关键词
TIAL
扩散连接
界面结构
接头强度
碳化硅
SiC, TiAl, diffusion bonding, interface structure, bonding strength