Co/Cu/Co三明治膜的巨磁电阻效应研究

STUDY ON GIANT MAGNETORESISTANCE IN Co/Cu/Co SANDWICHES

采用超高真空电子束蒸发方法在硅单晶衬底上制备了Ｃｏ／Ｃｕ／Ｃｏ 三明治膜，研究了衬底晶向、过渡层材料和生长室温度对三明治膜中巨磁电阻效应的影响；结合原子力显微镜表面形貌观察，探讨了三明治膜表面（ 界面）粗糙度与其巨磁电阻效应的内在关系；还分析了三明治膜经高温热退火后巨磁电阻效应退化的物理机制。

Co/Cu/Co sandwiches were fabricated on crystalline silicon substrate by UHV electron beam evaporation. The influence of substrate orientation, material of buffer layer and fabrication temperature on the giant magnetoresistance (GMR) effect in the sandwiches was studied. By using Atomic Force Microscope, the relationship between the surface (interface) roughness and GMR effect in the sandwiches was revealed. The mechanism of the degeneration of GMR effect in the sandwiches after high temperature annealing was also analyzed.