氢、氦共注入的硅样品的退火行为

ANNEALING OF Si SAMPLES CO-IMPLANTED BY HYDROGEN AND HELIUM

在以氢先氦后的顺序注入的硅样品中，经不同温度的退火，发现比氢、氦分别单独注入时小得多的注入剂量足以使硅样品表面产生砂眼及剥离。本文用ＲＢＳ／Ｃ、Ｘ射线四晶衍射、ＡＦＭ、ＸＴＥＭ 等不同方法对氢、氦共注入样品进行了研究，对结果作了计算机模拟，并对其机制做了分析与研究。

Hydrogen and then helium were implanted into Si samples. Then these samples were annealed at different temperatures. It was found that the total dose of co-implantation which cause blistering and exfoliation on the surface was much smaller than the dose of hydrogen and helium implanted separately. In this work, RBS/C (Rutherford Backscattering Spectroscopy and Channeling), X-ray Four-Crystal Diffractormeter, AFM (Atom Force Microscopy) and XTEM (Cross Sectional Transmission Electron Microscopy) were used to characterize these samples. Some results were then computer simulated and the mechanism was discussed.