摘要
利用高温烧结法制备了多晶立方结构的La0.67Ca0.33 MnO3-δ体材料。材料的居里温度(TC)为280K,其金属半导体转变温度(Tp) 为270K,接近于TC。外加磁场下的磁电阻(MR) 峰值温度与Tp 十分接近。外加磁场为0.6T 和5T时,材料的MR 峰置分别达到40% 和76% 。材料具有显著的巨磁电阻效应。在液氮温度附近,也观察到了相当大的磁电阻效应。利用高温烧结法制备了多晶立方结构的La0.67Ca0.33 MnO3-δ体材料。材料的居里温度(TC)为280K,其金属半导体转变温度(Tp) 为270K,接近于TC。外加磁场下的磁电阻(MR) 峰值温度与Tp 十分接近。外加磁场为0.6T 和5T时,材料的MR 峰置分别达到40% 和76% 。材料具有显著的巨磁电阻效应。在液氮温度附近,也观察到了相当大的磁电阻效应。
Cubic polycrystalline bulk materials of La 0.67 Ca 0.33 MnO 3-δ were synthesized by sintering at high temperature. The samples showed a metal semiconductor transition at 270K, which was close to their Curie temperature, T C , 280K. The magnetoresistance (MR) peak temperature appeared at the temperature very close to T p . The MR peak value reached 76% under 5·10 4Oe field, and still reached 40% under a low field of 6·10 3Oe, both indicating a notable giant magnetoresistance (GMR) effect. There still existed relatively large MR effect at low temperatures near 77K, which was related to the transport behavior of the carriers near the grain boundaries.
出处
《功能材料与器件学报》
CAS
CSCD
1999年第3期229-234,共6页
Journal of Functional Materials and Devices
基金
中国科学院上海冶金研究所与日本通产省电子技术综合研究所合作课题
关键词
烧结
巨磁电阻效应
多晶
Sintering, GMR, Metal semiconductor transition, Polycrystalline