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Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 被引量:1

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
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摘要 A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current. A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期247-251,共5页 中国物理B(英文版)
基金 Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904) the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106)
关键词 quantum dot external cavity laser broadband tuning quantum dot, external cavity laser, broadband tuning
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  • 1Yi L, Yuan J, Qi X H, Chen W L, Zhou D W, Zhou T, Zhou X J and Chen X Z 2009 Chin. Phys. B 18 1409.
  • 2Cooney T F, Skinner H T and Angel S ]VI 1995 Appl. Spectrosc. 49 846.
  • 3Masaki O, Ikuo W and Masabumi M 2001 Jpn. J. Appl. Phys. 40 357.
  • 4Wysocki G, Curl R F, Tittel F K, Maulini R, Bulliard J M and Faist J 2005 Appl. Phys. B 81 769.
  • 5Ho H L, Jin W and Demokan M S 2000 Electron. Let~. 36 1191.
  • 6Kuramoto N and Fujii K 2005 IEEE Trans. Instrum. Meas. 54 868.
  • 7Chinn S R, Swanson E A and Fujimoto J G 1997 Opt. Lett. 22 340.
  • 8Srinivasan V J, Huber R, Gorczynska I, Fujimoto J G, Jiang J Y, Reisen P and Cable A E 2007 Opt. Lett. 32 361.
  • 9Sun Z Z, Ding D, Gong Q, Zhou W, Xu B and Wang Z G 1999 Opt. Quantum Electron. 31 1235.
  • 10Zhang Z Y, Wang Z G, Xu B, Jin P, Sun Z Z and Liu F Q 2004 IEEE Photon. Technol. Lett. 16 27.

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