期刊文献+

Shock wave velocity measurement in the Al_2O_3 under ultrahigh pressure

Shock wave velocity measurement in the Al_2O_3 under ultrahigh pressure
下载PDF
导出
摘要 in indirect-drive experiment, the blank effect caused by X-rays from Hohlraum will show the dark area in time scale of optical streak camera (OSC). This blank effect, which was a serious problem in indirect-drive shock wave experiments, has been explained by the semiconductor model. The X-rays cause the band to band transition and the probe laser is absorbed by the intraband transition, which leads to a dark region in time scale of the OSC image. In the experiment, the reflectivity of shock wave front was measured to be about 50% at shock wave velocity 32 km/s and was compared to the theoretical calculations with the Drude free electron model. From the experimental data, it is found that the blank effect can be avoided at radiation temperature of 170 eV if the Al layer is thicker than 60μm. in indirect-drive experiment, the blank effect caused by X-rays from Hohlraum will show the dark area in time scale of optical streak camera (OSC). This blank effect, which was a serious problem in indirect-drive shock wave experiments, has been explained by the semiconductor model. The X-rays cause the band to band transition and the probe laser is absorbed by the intraband transition, which leads to a dark region in time scale of the OSC image. In the experiment, the reflectivity of shock wave front was measured to be about 50% at shock wave velocity 32 km/s and was compared to the theoretical calculations with the Drude free electron model. From the experimental data, it is found that the blank effect can be avoided at radiation temperature of 170 eV if the Al layer is thicker than 60μm.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期307-312,共6页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant No. 10805041) the Science and Technology Foundation on Plasma Physics Laboratory (Grant No. 9140C6801021001)
关键词 shock wave optical diagnosis interfere meter semiconductor model shock wave, optical diagnosis, interfere meter, semiconductor model
  • 相关文献

参考文献18

  • 1Hicks D G, Boehly T R, Celliers P M, Bradley D K, Eggert J H, McWilliams R S, Jeanloz R and Collins G W 2008 Phys. Rev. B 78 174102.
  • 2McWilliams R S, Eggert J H, Hicks D G, Bradley D K, Celliers P M, Spaulding D K, Boehly T R, Collins G W and Jeanloz R 2010 Phys. Rev. B 81 014111.
  • 3Ozaki N, Ono T, Takamatsu K, Nakano M, Kataoka T, Yoshida M, Wakabayashi K, Nakai M, Nagai K, Shigemori K, Yamanaka T and Kondo K 2005 Phys. Plasmas 12 124503.
  • 4Celliers P M, Bradley D K, Collins G W, Hicks D G, Boehly T R and Armstrong W J 2004 Rev. Sci. Instrum. 75 4916.
  • 5Bradley D K, Eggert J H, Hicks D G, Celliers P M, Moon S J, Cauble R C and Collins G W 2004 Phys. Rev. Left. 93 195506.
  • 6Hicks D G, Boehly T R, Celliers P M, Eggert J H, Vianello, Meyerhofer D D and Collins G W 2005 Phys. Plasmas 12 082702.
  • 7Barker L M and Hollenbach R E 1972 J. Appl. Phys. 43 4669.
  • 8Smith R F, Eggert J H, Saculla M D, Jankowski A F, Bastea M, Hicks D G and Collins G W 2008 Phys. Rev. Lett. 101 065701.
  • 9Theobald W, Miller 3 E, Boehly T R, Vianello E, Meyer- hofer D D, Sangste T C, Eggert J and Celliers P M 2006 Phys. Plasmas 13 122702.
  • 10Chen K G, Zhu W J, Ma W, Deng X L, He H L and Jing F Q 2010 Acta Phys. Sin. 59 1225.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部