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Strained and strain-relaxed epitaxial Ge_(1-x)Sn_x alloys on Si(100) substrates

Strained and strain-relaxed epitaxial Ge_(1-x)Sn_x alloys on Si(100) substrates
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摘要 Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a Xmin value of 6.7% measured by channeling and random Rutherford baekscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance. Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a Xmin value of 6.7% measured by channeling and random Rutherford baekscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期485-489,共5页 中国物理B(英文版)
基金 Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415) the National Basic Research Program of China (Grant No. 2007CB613404) the National Natural Science Foundation of China (Grant Nos. 60906035 and 61036003) the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01)
关键词 GeSn alloys STRAINED strain-relaxed molecular beam epitaxy GeSn alloys, strained, strain-relaxed, molecular beam epitaxy
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