NTD Si材料的微结构研究

The Study on the Microstructure of NTD Si Material

NTD Si材料与原始单晶硅相比,其缺陷和位错有所增加,特别是EPR缺陷增加显著,电阻率增加20%左右,150(?)·cm以上的电阻率曲线还存在一个较弱的吸收峰值。辐照处理后的NTD Si材料,其点阵常数普遍增大,[111]方向的缺陷明显增多。中照50小时后,局部出现辐照损伤。

The crystal defects and dislocations for NTD Si materials has therebeen increasing to some extent by comparison with its origenal, especiallyEPR defects increase notable. Specific resistance has been increasing abaut20%, and there's a weaker absorb peak on the curve. The crystal latticeconstant of NTD Si materials raise in common, and the defects on (111) dir-ection increase remarkable after neutron irradiation. Some areas appearirradiation damage after 50 hours by irradiation treatment.