Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors 被引量：2

Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors

原文传递

导出

摘要 We present a generic approximate graphical method for determining the equilibrium Fermi level and majority carrier density of a semiconductor with multiple donors and multiple acceptors compensating each other. Simple and easy-to-follow procedures of the graphical method are described.By graphically plotting two wrapping step functions facing each other,one for the positive hole-ionized donor and one for the negative electron-ionized acceptor,we have the crossing point that renders the Fermi level and majority carrier density.Using the graphical method,new equations are derived,such as the carrier compensation proportional to N;/N;,not the widely quoted N;-N;.Visual insight is offered to view not only the result of graphic determination of Fermi level and majority carrier density but also the dominant and critical pair of donors and acceptors in compensation.The graphical method presented in this work will help to guide the design,adjustment,and improvement of the multiply doped semiconductors.Comparison of this approximate graphical method with previous work on compensation,and with some experimental results,is made.Future work in the field is proposed. We present a generic approximate graphical method for determining the equilibrium Fermi level and majority carrier density of a semiconductor with multiple donors and multiple acceptors compensating each other. Simple and easy-to-follow procedures of the graphical method are described.By graphically plotting two wrapping step functions facing each other,one for the positive hole-ionized donor and one for the negative electron-ionized acceptor,we have the crossing point that renders the Fermi level and majority carrier density.Using the graphical method,new equations are derived,such as the carrier compensation proportional to N_A/N_D,not the widely quoted N_A-N_D.Visual insight is offered to view not only the result of graphic determination of Fermi level and majority carrier density but also the dominant and critical pair of donors and acceptors in compensation.The graphical method presented in this work will help to guide the design,adjustment,and improvement of the multiply doped semiconductors.Comparison of this approximate graphical method with previous work on compensation,and with some experimental results,is made.Future work in the field is proposed.

作者 Ken K.Chin

机构地区 Department of Physics and Apollo CdTe Solar Energy Research Center

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第6期1-6,共6页 半导体学报（英文版）

关键词 doping compensation Fermi level carrier density graphical method IONIZATION doping compensation Fermi level carrier density graphical method ionization

分类号 O471 [理学—半导体物理]

引文网络
相关文献

参考文献14

1Sze S. Physics of semiconductor devices. 2nd ed. New York: Wi- ley, 1981.
2Blood P, Orton J W. The electrical characterization of semicon- ductors: majority carriers and electron states. Academic Press, 1992.
3Orton J W, Blood P. The electrical characterization of semicon- ductors: measurement of minority carrier properties. Academic Press, 1990.
4Look D C. Semi-conductors and semi-metals. Willardson R K, Beer A C, ed. New York: Academic Press, 1983.
5Harafuji T, Kawamura J. Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal. Appl Phys, 2005, 96:2501.
6Akasaki I, Amano H. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters. Jpn J Appl Phys, 1997, 36:5393.
7Minami T. Transparent conducting oxide semiconductors for transparent electrodes. Semicond Sci Technol, 2005, 20:S35.
8Mamazza R Jr, Morel D L, Ferekides C S. Transparent conduct- ing oxide thin films of Cd2 SnO4 prepared by RF magnetron co- sputtering of the constituent binary oxides. Thin Solid Films, 2005, 484(1/2): 26.
9Wu X. High-efficiency polycrystalline thin-film solar cells. Solar Energy, 2004, 77:803.
10Gessert T A, Metzger W K, Dippo P, et al. Dependence of carrier lifetime on copper-contacting temperature and ZnTe:Cu thick- ness in CdS/CdTe thin film solar cells. Thin Solid Films, 2009, 517:2370.