溶胶-凝胶法制备Eu、Cd共掺杂SiO_2基质材料的结构和发光性质

Structure and Luminescence Properties of Eu-Cd-co-doped SiO_2 Material by Sol-Gel Method

采用溶胶-凝胶法制备Eu3+、Cd2+共掺杂SiO2基质材料,通过差热-热重、红外光谱和荧光光谱研究了材料的结构和发光性能.差热-热重分析表明,120℃时材料中的吸附水和有机物已基本除去,400℃时凝胶玻璃中的挥发性成分已全部除去.红外光谱测试结果表明,800℃退火的样品中只存在SiO2网状结构,Cd2+的掺入没有影响基质的主体结构.用Eu3+的7F0-5L6(395 nm)激发光激发时,产生Eu3+的5D0→7FJ(J=0,1,2,3,4)特征发射峰.在对Cd2+的掺杂量与Eu3+的发光性质的研究中发现,Cd2+的掺入对Eu3+发射峰的位置基本没有影响,但明显敏化了发光强度.对不同退火温度下材料的发光性能进行对比,发现随退火温度的增加,发光强度增加.

Eu-Cd-co-doped SiO2 material was prepared by Sol-Gel process,and the structure and luminescent property were studied with DTA-TG,IR spectrum and the fluorescence spectrum.The DTA-TG analysis shows most water and organic substance in the system were removed at 120 ℃,and volatile matter absorbed by the gel was removed completely at 400 ℃.The IR spectrum result indicated that the sample annealing at 8 000 ℃ exist only network structure of SiO2,and the doping Cd2＋ did not affect the major structure.When the excitation wavelength was 359 nm,the sample showed 5D0→7FJ（J=0,1,2） the characteristic emission peaks of Eu3＋.The investigation in the relation of Cd2＋ doping concentration and Eu3＋ luminescent property showed that doping Cd2＋ basically had not effect to the Eu3＋ transition peak position,and sensitized the luminescence intensity obviously.Under different annealing temperatures,it was found that the luminescence intensity increased with annealing temperature.