薄膜厚度和工作压强对室温制备AZO薄膜性能的影响

Effects of Thickness and Working Pressure on the Properties of Al-doped ZnO Thin Films Deposited at Room Temperature

采用射频磁控溅射法在室温下、普通玻璃基片上制备了AZO透明导电薄膜。用X射线衍射仪、原子力显微镜、紫外-可见分光光度计和四探针测量了不同薄膜厚度和不同工作压强下所得样品的结构、电学和光学性能,结果表明,所制备的AZO薄膜均具有六角纤锌矿结构,沿c轴择优取向生长;在可见光范围内,薄膜平均透过率约为80%;随着薄膜厚度的增加和工作压强的降低,薄膜的电阻率呈下降趋势;得到的薄膜最低方块电阻为7.5Ω/□。

Transparent conducting aluminum-doped zinc oxide （AZO） thin films have been deposited on glass substrates by RF magnetron sputtering at room temperature. The structural,, electrical and optical properties of the films deposited at different thickness and working pressure were investigated by XRD, AFM, UV-VIS spectrum and four-point probe measurements. It has been found that all the AZO films are transparent with an average of 80% transmittance, within the visible wavelength region. When the film thickness increases and the working pressure de- creases, the resistance of AZO films is decreasing. Among all these films, the minimum sheet resistance is 7.5Ω/□.