用于制备YBCO薄膜的光辅助MOCVD反应器内流动现象的数值研究

NUMERICAL STUDY OF FLOW PHENOMENA IN A PHOTO-ASSISTED MOCVD REACTOR FOR PREPARING YBCO THIN FILMS

对一种制备YBCO薄膜的光辅助MOCVD反应器内的流动现象进行了三维数值模拟研究。在模拟计算中,分别改变基座与进口的相对角度(Φ)、反应器顶壁倾斜角度(Ψ),得出反应器中流场的相应变化。根据对模拟结果的分析,发现当基座平面与进气口轴线之间的夹角Φ=22.5°及反应器顶壁倾角Ψ=30°时,基片表面气流速度大小合适,分布均匀,且回流涡旋得到抑制,反应器内的流场较适合YBCO薄膜生长。

Three-dimensional numerical study on flow phenomena in a photo-assisted MOCVD reactor for preparing YBCO thin films is conducted.By varying the angle between susceptor surface and inlet axis（Φ） and the top wall inclination angle（Ψ）,velocity fields inside the reactor are calculated.It is found that the flow field is suitable for growing YBCO thin films when Φ=22.5° and Ψ=30° due to the uniform velocity and the depressed convection roll.