摘要
用多种方法制作了Au 凸点、Cu/Au 凸点、Ni/Au 凸点、Cu/Pb - Sn 凸点及C4 凸点等。其中制作的微型Au 凸点直径为10 μm ,间距30 μm ,高度5 ~8 μm ,芯片上微凸点近1 000 个。还对各种不同的制作方法进行了研究,并对芯片凸点的可靠性进行了一定的考核,效果良好。文中给出一组试验芯片的Cu/Pb - Sn 凸点可靠性考核数据:经125 ℃,1 000 h 电老化,其接触电阻变化范围为0 .1 % ~0 .7 % ;经- 55 ℃~+ 125 ℃,1 000 次高低温冲击,其接触电阻也在0 ~0 .7 % 内。而且,经高低温冲击后,仍具有相当高的剪切力:16 个直径200μm 的凸点剪切力最低为17 .5N,最高42 .5 N,平均值为27 .8 N。
Writers have researched and fabricated Au-Bump,Cu/Au-Bump,Ni/Au-Bump,Cu/Pb/Sn-Bump,C4-Bump and so forch.Among Which,the diameter of micro-Au-Bump is 10 μm,the pitch is 30 μm,the height is 5~8 μm,the number of the micro-Au-Bump is near 1 000.Writers have researched various methods of fabricating micro-bumps and done reliability trials.The result of reliability trials is good. This paper gives datum of reliability trials of Cu/Pb/Sn-Bump.(1)In 125 ℃,after 1 000 h voltage aging,the contact resistance ranges from 0.1% to 0.7 %.(2)After high-low temperature shock for 1 000 times from -55 ℃ to +125 ℃,the contact resistance ranges 0~ 0.7 %.(3)After high-low temperature shock,its shear force is also very high.The shear force from 16 bumps of diameter 200 μm is:the low 17.5 N,the high 42.5 N,the average 27.8 N.
出处
《电子工艺技术》
1999年第6期217-220,共4页
Electronics Process Technology