摘要
用多种方法制作了Ａｕ 凸点、Ｃｕ／Ａｕ 凸点、Ｎｉ／Ａｕ 凸点、Ｃｕ／Ｐｂ － Ｓｎ 凸点及Ｃ４ 凸点等。其中制作的微型Ａｕ 凸点直径为１０ μｍ ，间距３０ μｍ ，高度５ ～８ μｍ ，芯片上微凸点近１ ０００ 个。还对各种不同的制作方法进行了研究，并对芯片凸点的可靠性进行了一定的考核，效果良好。文中给出一组试验芯片的Ｃｕ／Ｐｂ － Ｓｎ 凸点可靠性考核数据：经１２５ ℃，１ ０００ ｈ 电老化，其接触电阻变化范围为０ ．１ ％ ～０ ．７ ％ ；经－ ５５ ℃～＋ １２５ ℃，１ ０００ 次高低温冲击，其接触电阻也在０ ～０ ．７ ％ 内。而且，经高低温冲击后，仍具有相当高的剪切力：１６ 个直径２００μｍ 的凸点剪切力最低为１７ ．５Ｎ，最高４２ ．５ Ｎ，平均值为２７ ．８ Ｎ。
Writers have researched and fabricated Au-Bump,Cu/Au-Bump,Ni/Au-Bump,Cu/Pb/Sn-Bump,C4-Bump and so forch.Among Which,the diameter of micro-Au-Bump is 10 μm,the pitch is 30 μm,the height is 5～8 μm,the number of the micro-Au-Bump is near 1 000.Writers have researched various methods of fabricating micro-bumps and done reliability trials.The result of reliability trials is good. This paper gives datum of reliability trials of Cu/Pb/Sn-Bump.(1)In 125 ℃,after 1 000 h voltage aging,the contact resistance ranges from 0.1% to 0.7 %.(2)After high-low temperature shock for 1 000 times from -55 ℃ to +125 ℃,the contact resistance ranges 0～ 0.7 %.(3)After high-low temperature shock,its shear force is also very high.The shear force from 16 bumps of diameter 200 μm is:the low 17.5 N,the high 42.5 N,the average 27.8 N.
出处
《电子工艺技术》
1999年第6期217-220,共4页
Electronics Process Technology
