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电容耦合单电子晶体管有源负载 被引量:1

Active Loads Based on Capacitively Coupled Single Electron Transistor
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摘要 本文基于单电子隧道效应的半经典模型,由电容耦合单电子晶体管的本征,电流电压特性出发,研究了在各种组态下,电容耦合单电子晶体管有源负载的本征电流电压特性,讨论了它们的交流小信号等效电路。 Starting with the intrinsic current voltage properties of Capacitively coupled Single Electron Transistor (C SET),the intrinsic current voltage properties of each form of the C SET active loads are studied by using a quasi classical model of the single electron tunneling effect,and its small signal equivalent circuit is also discussed.The results are significant for the design of the single electron analog circuits.
出处 《电子学报》 EI CAS CSCD 北大核心 1999年第11期65-67,共3页 Acta Electronica Sinica
基金 国家自然科学基金
关键词 电容耦合 单电子晶体管 有源负载 capacitively coupled single electron transistor active load AC small signal equivalent circuit
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  • 1AVERIN D V, LIKHAVE K K. Coulomb Blokade of Single-Electron Tunneling, and Coherent Ocsillations in Small Tunnel Junction [J]. Journal of Low Temperature Physics, 1986,62 (3/4):345 -373.
  • 2PUGLISI R A, LOMBARDO S,CORSO D, et al. Effects of Partial Self-Ordering of Si Dots Formed by Chemical Vapor Deposition on the Threshold Voltage Window Distribution of Si Nanocrystal Memories [J]. J. Appl. Phys. ,2006,100 (8):86- 104.
  • 3K ROK KIM, SONG Ki-WHAN, DAE HWAN KIM. Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semi Conductor Structure with a Unique Distribution Function in the Coulomb-Blockade Osillation Region [J].Jap. Journal of Applied Physics,2004,43(4B):20-31.
  • 4MAHA S A. Quasi-Analytical SET Model for Few Electron Circuit Simulation [J]. IEEE Electron Device Letters, 2002,23:366.

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