新型阻变存储器内的电压解决方案

Design and Implementation of RRAM Voltage Supply Circuits

相对于现在流行的FLASH型存储器,新型阻变存储器(resistive-RAM,RRAM)有很多优势,比如较高的存储密度和较快的读写速度。而针对RRAM的读写操作特性,提出了一种适用于新型阻变存储器的提供操作电压的电路。该方案解决了新型存储器需要外部提供高于电源电压的操作电压的问题,使得阻变存储器能应用于嵌入式设备。同时,对工艺波动和温度波动进行补偿,从而降低了阻变存储器的读写操作在较差的工艺和温度环境下的失败概率,具有很强的实际应用意义。该设计采用0.13μm标准CMOS 6层金属工艺在中芯国际(SMIC)流片实现,测试结果表明,采用此电路的RRAM能正确地进行数据编程和擦除等操作,测试结果达到设计要求。

Compared with the FLASH memory,the resistive RAM（RRAM） has many advantages such as high density,fast read and write speed.A circuit was designed to provide a series of PVT independent voltages for RRAM.With this design,RRAM could be used in embedded application without the additional voltage high supply.Besides,the failure rate of RRAM operation could be reduced,which means a lot to resistive memory production.The design was demonstrated in a 1 Mb test chip implemented in SMIC 0.13 μm standard CMOS 1P6M technology.The test results indicate that the RRAM test chip with this circuit can program and erase correctly.The test results meet the design requirements.