摘要
介绍了一种采用p-i-n开关设计的单路选通开关矩阵。通过合理设计p-i-n二极管的直流反偏电压,解决了p-i-n开关矩阵承受功率的设计问题;采用宽带锥形电感和空心电感相结合的电路形式,设计了一种宽带的偏置电路;优化了开关矩阵电路的设计,简化了电路结构形式,提高了开关矩阵的微波性能和可生产性。设计实现了一种超宽带单路选通开关矩阵,工作频率为1~18 GHz,插入损耗(IL)<5 dB,端口隔离(Isolation)>35 dB。验证结果表明,理论仿真结果与实验测试结果基本一致,证明了设计方法的可行性。
An approach for designing broadband switch matrices was presented.Based on the selection of an appropriate applied DC reverse bias voltage in p-i-n diode,the power capacity of the switch matricswas improved.A broadband bias circuitwas designed using the conical geometry RF choke and air-core inductor.The m icrowave property of the switch matrices was improved by optim izing the circuit configuration.From 1 GHz to 18 GHz,the switch matrices insertion loss is less than 5 dB,the isolation is greater than 35 dB.Simulation and testing results prove that the design method is feasible.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第6期474-477,共4页
Semiconductor Technology