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超宽带开关矩阵的研制 被引量:2

Design of Broadband Switch Matrices
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摘要 介绍了一种采用p-i-n开关设计的单路选通开关矩阵。通过合理设计p-i-n二极管的直流反偏电压,解决了p-i-n开关矩阵承受功率的设计问题;采用宽带锥形电感和空心电感相结合的电路形式,设计了一种宽带的偏置电路;优化了开关矩阵电路的设计,简化了电路结构形式,提高了开关矩阵的微波性能和可生产性。设计实现了一种超宽带单路选通开关矩阵,工作频率为1~18 GHz,插入损耗(IL)<5 dB,端口隔离(Isolation)>35 dB。验证结果表明,理论仿真结果与实验测试结果基本一致,证明了设计方法的可行性。 An approach for designing broadband switch matrices was presented.Based on the selection of an appropriate applied DC reverse bias voltage in p-i-n diode,the power capacity of the switch matricswas improved.A broadband bias circuitwas designed using the conical geometry RF choke and air-core inductor.The m icrowave property of the switch matrices was improved by optim izing the circuit configuration.From 1 GHz to 18 GHz,the switch matrices insertion loss is less than 5 dB,the isolation is greater than 35 dB.Simulation and testing results prove that the design method is feasible.
出处 《半导体技术》 CAS CSCD 北大核心 2011年第6期474-477,共4页 Semiconductor Technology
关键词 P-I-N二极管 偏置电路 大功率 宽带 开关矩阵 p-i-n diodes bias circuit high power broadband switch matrices
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参考文献4

  • 1CAVERLY R H, HILLER G. Establishing the minimum reverse bias for a p-i-n diode in a high-power switch [ J ]. IEEE Transactions on Microwave Theory and Techniques, 1990, 38(12) : 1938 - 1943.
  • 2端木义清.宽带单刀多掷PIN开关的设计[J].雷达与对抗,2005,25(4):54-56. 被引量:18
  • 3TYNGSBORO M A. A broadband microwave choke [ J]. Microwave Journal, 1999(12): 140- 144.
  • 4HILLER G. Design with p-i-n diodes [ J]. RF Design, 1979, 2(2): 26-29.

二级参考文献3

  • 1Caverly R, Hiller G. The Frequency Dependent Impedance PIN Diodes [ J ]. IEEE Trans. on Microwave Theory and Tech, 1989(4).
  • 2Inder Bahl, Prakash Bhartial. Microwave Solid State Circuit Design [ M ]. New York: A Wiley Interscience Publication, 1988.
  • 3怀特JF..微波半导体控制电路[M].北京:科学出版社,1982..

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二级引证文献9

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