(n11)面上生长的Ⅲ-Ⅴ族半导体的喇曼散射研究

RAMAN SCATTERING STUDIES OF Ⅲ Ⅴ SEMICONDUCTORS GROWN ON [n11] ORIENTED SUBSTRATES

报道不同指数面（ｎ１１）上生长的Ｇａ０．５Ａｌ０．５Ａｓ 和Ｉｎ０．５２Ａｌ０．４８Ａｓ系列样品的长光学声子模的室温喇曼散射测量结果．在背散射条件下不同的偏振配置下，观测到这些样品中对应的Ｌ０ 模和Ｔ０ 模的相对强度随着不同的指数面呈现出规律变化，同时把这一实验结果与（ｎ１１）指数面上生长的闪锌矿结构材料的喇曼散射选择定则的理论预计相比较。

The room temperature Raman spectra of the Ga 0.5 Al 0.5 As and the In 0.52 Al 0.48 As epilayer grown on [ n 11] oriented substrates were measured in various back scatterng geometries. The relative intensity of TO modes and LO modes in those samples shows a regular variation with differently oriented substrates in the experiments. By comparing experimental data with Raman scattering selection rules for the zincblende structure epilayer grown on [ n 11] oriented substrates, it was found that the present calculations are in good agreement with the experimental results.